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Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers

Identifieur interne : 000830 ( Main/Repository ); précédent : 000829; suivant : 000831

Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers

Auteurs : RBID : Pascal:13-0117748

Descripteurs français

Pascal (Inist)
- Gallium, Mécanisme croissance, Traitement par plasma, Epitaxie jet moléculaire, Indium, Adatome, Méthode fondant, Morphologie cristalline, Etude théorique, Composé III-V, Nitrure de gallium, Nitrure d'indium, InGaN, Substrat GaN, In, 6855A, 8115H.

English descriptors

KwdEn :
- Adatoms, Crystal morphology, Flux growth, Gallium, Gallium nitride, Growth mechanism, III-V compound, Indium, Indium nitride, Molecular beam epitaxy, Plasma assisted processing, Theoretical study.

Abstract

In this work we study the peculiar role of gallium and nitrogen atoms in the growth of InGaN by Plasma Assisted Molecular Beam Epitaxy (PAMBE). We investigate growth of InGaN layers on vicinal GaN (0001) substrates. Indium incorporation as a function of gallium and nitrogen fluxes was examined. We propose a microscopic model of InGaN growth by PAMBE postulating different indium adatom incorporation mechanisms on two nonequivalent atomic step edges of wurtzite crystal. The role of gallium and nitrogen fluxes during the growth of InGaN layers is discussed.

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Pascal:13-0117748

Le document en format XML

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<author><name sortKey="Turski, H" uniqKey="Turski H">H. Turski</name>
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<author><name sortKey="Siekacz, M" uniqKey="Siekacz M">M. Siekacz</name>
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<author><name sortKey="Wasilewski, Z R" uniqKey="Wasilewski Z">Z. R. Wasilewski</name>
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<term>Crystal morphology</term>
<term>Flux growth</term>
<term>Gallium</term>
<term>Gallium nitride</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>Indium</term>
<term>Indium nitride</term>
<term>Molecular beam epitaxy</term>
<term>Plasma assisted processing</term>
<term>Theoretical study</term>
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<term>Mécanisme croissance</term>
<term>Traitement par plasma</term>
<term>Epitaxie jet moléculaire</term>
<term>Indium</term>
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<term>Méthode fondant</term>
<term>Morphologie cristalline</term>
<term>Etude théorique</term>
<term>Composé III-V</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
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<term>Substrat GaN</term>
<term>In</term>
<term>6855A</term>
<term>8115H</term>
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Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers

Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri